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GB2X50MPS12-227
1200 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds
VRRM IF (Tc = 100°C) QC
Package 1 2
4
3
SOT-227
= 1200 V = 124 A* = 398 nC*
Advantages
• Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current
Applications
• Boost Diode in Power Factor Correction (PFC) • Switched Mode P
GB2X50MPS12-227 Datasheet
