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GB2X50MPS17-227 - Silicon Carbide Schottky Diode

Key Features

  • Low VF for High Temperature Operation.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • Low VF for High Temperature Operation Package SOT-227 TM VRRM = IF (TC = 100°C) = QC = 1700 V 182 A.
  • 1076 nC.
  • A A RoHS K K REACH Advantages.
  • Improve.

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Datasheet Details

Part number GB2X50MPS17-227
Manufacturer GeneSiC
File Size 806.76 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB2X50MPS17-227 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation Package SOT-227 TM VRRM = IF (TC = 100°C) = QC = 1700 V 182 A * 1076 nC * A A RoHS K K REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency Applications • EV Fast Chargers • Solar Inver