GB2X50MPS17-227 Overview
GB2X50MPS17-227 1700V 100A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GB2X50MPS17-227 Key Features
- Low VF for High Temperature Operation
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- Low VF for High Temperature Operation
- 1076 nC
- Improved System Efficiency