GB50SLT12-247 - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

Part number	GB50SLT12-247
Manufacturer	GeneSiC
File Size	512.14 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GB50SLT12-247 Datasheet
Additional preview pages of the GB50SLT12-247 datasheet.

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package VRRM IF (Tc = 135°C) QC = 1200 V = 103 A = 199 nC 2 1 TO-247-2L Advantages.
Low Standby Power Losses.
Improved Circuit.

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Published: Feb 14, 2019 |