• Part: GB50SLT12-247
  • Manufacturer: GeneSiC
  • Size: 512.14 KB
Download GB50SLT12-247 Datasheet PDF
GB50SLT12-247 page 2
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GB50SLT12-247 page 3
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GB50SLT12-247 Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)

GB50SLT12-247 Description

GB50SLT12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode.

GB50SLT12-247 Applications

  • Boost Diode in Power Factor Correction (PFC)