• Part: GC2X100MPS06-227
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 340.42 KB
GC2X100MPS06-227 Datasheet (PDF) Download
GeneSiC
GC2X100MPS06-227

Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • 3000 V Isolation for Low - 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speed Package 3 VRRM IF (Tc = 100°C) QC 4 = 650 V = 272 A * = 320 nC * 2 1 SOT-227 (Isolated Base) Advantages
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses