Datasheet4U.com

GC2X100MPS06-227 - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

📥 Download Datasheet

GC2X100MPS06-227 Silicon Carbide Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – GC2X100MPS06-227

Datasheet Details

Part number	GC2X100MPS06-227
Manufacturer	GeneSiC
File Size	340.42 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GC2X100MPS06-227 Datasheet
Additional preview pages of the GC2X100MPS06-227 datasheet.

Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
3000 V Isolation for Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speed Package 3 VRRM IF (Tc = 100°C) QC 4 = 650 V = 272 A.
= 320 nC.
2 1 SOT-227 (Isolated Base) Advantages.
Lo.

📁 Similar Datasheet

GC2002N5SBY1B - LCD (Solomon)
GC2004C-01XA0 - LCD (GEMINI)
GC2004N4SKY1B - LCD (Solomon)
GC2011A - 3.3V DIGITAL FILTER CHIP (Texas Instruments)
GC201607-ATC4 - SMD Type Green Emitter (CT Micro)
GC201607-MTC4 - SMD Type Green Emitter (CT Micro)
GC2035 - UXGA CMOS Image Sensor (GalaxyCore)
GC2053 - 2Mega CMOS Image Sensor (GalaxyCore)

Other Datasheets by GeneSiC

GC2X10MPS12-247 - Silicon Carbide Schottky Diode
GC2X15MPS12-247 - Silicon Carbide Schottky Diode
GC2X50MPS06-227 - Silicon Carbide Schottky Diode
GC2X5MPS12-247 - Silicon Carbide Schottky Diode
GC2X8MPS12-247 - Silicon Carbide Schottky Diode
GC20MPS12-247 - Silicon Carbide Schottky Diode

Published: May 6, 2019 |