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GC2X50MPS06-227 650V 100A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Low VF for High Temperature Operation • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Package SOT-227
TM
VRRM
=
IF (TC = 100°C) =
QC
=
650 V 126 A * 280 nC *
A
A
RoHS
K
K
REACH
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
Applications
• Power Factor Correction (PFC) • Electric Ve
GC2X50MPS06-227 Datasheet
