• Part: GC2X8MPS12-247
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 2.03 MB
GC2X8MPS12-247 Datasheet (PDF) Download
GeneSiC
GC2X8MPS12-247

Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low - 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds Package Case A A K TO-247-3 VRRM IF (Tc = 135°C) QC = 1200 V = 40 A* = 66 nC* Case A KA Advantages
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses