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GD60MPS06H - Silicon Carbide Schottky Diode

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC/IF.
  • 100% Avalanche Tested.
  • Enhanced Surge Current Robustness.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Optimal Price Performance.
  • Improved System Efficiency.
  • Reduced Cooling Requirements.
  • Increased System Power Density.

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Datasheet preview – GD60MPS06H

Datasheet Details

Part number GD60MPS06H
Manufacturer GeneSiC
File Size 539.20 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD60MPS06H Datasheet
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Full PDF Text Transcription

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GD60MPS06H 650V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC/IF • 100% Avalanche Tested • Enhanced Surge Current Robustness • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Optimal Price Performance • Improved System Efficiency • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • High System Reliability • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Package TM VRRM = IF (TC = 130°C) = QC = 650 V 60 A 92 nC Case RoHS TO-247-2 K A REACH Applications • Power Factor Correction (PFC) • Electric Vehicles and Battery Charge
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