GR1500JT17-263 - Silicon Carbide Junction Transistor

GeneSiC

Key Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-.

GR1500JT17-263 silicon carbide junction transistor by GeneSiC - Datasheet Preview

Datasheet Details

Part number	GR1500JT17-263
Manufacturer	GeneSiC
File Size	578.77 KB
Description	Silicon Carbide Junction Transistor
Datasheet	GR1500JT17-263 Datasheet

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Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode Advantages • Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth Package GR1500JT17-263 VDS RDS(ON) ID (@ 25°C) hFE (@ 25°C) = 1700 V = 1.