• Part: GR1500JT17-263
  • Description: Silicon Carbide Junction Transistor
  • Category: Transistor
  • Manufacturer: GeneSiC
  • Size: 578.77 KB
Download GR1500JT17-263 Datasheet PDF
GeneSiC
GR1500JT17-263
GR1500JT17-263 is Silicon Carbide Junction Transistor manufactured by GeneSiC.
Features - 175 °C Maximum Operating Temperature - Gate Oxide Free Si C Switch - Exceptional Safe Operating Area - Excellent Gain Linearity - Temperature Independent Switching Performance - Low Output Capacitance - Positive Temperature Coefficient of RDS,ON - Suitable for Connecting an Anti-parallel Diode Advantages - patible with Si MOSFET/IGBT Gate Drive ICs - > 20 µs Short-Circuit Withstand Capability - Lowest-in-class Conduction Losses - High Circuit Efficiency - Minimal Input Signal Distortion - High Amplifier Bandwidth Package VDS RDS(ON) ID (@ 25°C) h FE (@ 25°C) = 1700 V = 1.5 Ω = 2A = 100 TAB Drain 1G2G3RS4S5S6S7S 7L D2PAK (TO-263-7L) Applications Please note: The Source and Gate Return pins are not exchangeable. Their exchange might lead to malfunction. - Down Hole Oil Drilling, Geothermal Instrumentation - Hybrid Electric Vehicles (HEV) - Solar Inverters -...