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MBR12030CT - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR12030CT, a member of the MBR12020CT Silicon Power Schottky Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj.

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Datasheet preview – MBR12030CT

Datasheet Details

Part number MBR12030CT
Manufacturer GeneSiC
File Size 717.53 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR12030CT Datasheet
Additional preview pages of the MBR12030CT datasheet.

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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VR
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