GeneSiC MBR20020CT
Silicon Power Schottky Diode
| Part No. | MBR20020CT |
|---|---|
| Datasheet | MBR20020CT Download |
| Manufacturer |  GeneSiC |
| Description | Silicon Power Schottky Diode |
| Buy | Stock & Price |
FEATURES
● High Surge Capability● Types from 20 to 40 V VRRM
● Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.3 ms, half sine Maximum forward voltage (per leg) VF Rever
