MBR300200CTR Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Overview: Silicon Power Schottky Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MBR300200CTR
Manufacturer	GeneSiC
File Size	696.80 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR300200CTR MBR300150CT Datasheet (PDF)

Key Features

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 t.

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More Datasheets from GeneSiC

Part Number	Description
MBR300200CT	Silicon Power Schottky Diode
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