MBR40035CT - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR40035CT, a member of the MBR40020CT Silicon Power Schottky Diode family.

Product Overview

GeneSiC

Part number	MBR40035CT
Manufacturer	GeneSiC
File Size	412.73 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR40035CT Datasheet
Additional preview pages of the MBR40035CT datasheet.

High Surge Capability.
Types from 20 V to 40 V VRRM.
Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30.

MBR40035CT - 400 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR40035CT - Schottky Power Diode (Naina Semiconductor)
MBR40035CT - Silicon Power Schottky Diode (America Semiconductor)
MBR40035CTR - Schottky Power Diode (Naina Semiconductor)
MBR40035CTR - Silicon Power Schottky Diode (America Semiconductor)
MBR40030CT - 400 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR40030CT - Schottky Power Diode (Naina Semiconductor)
MBR40030CT - Silicon Power Schottky Diode (America Semiconductor)
MBR40030CTR - Schottky Power Diode (Naina Semiconductor)
MBR40030CTR - Silicon Power Schottky Diode (America Semiconductor)

Other Datasheets by GeneSiC

Published: Nov 10, 2014 |