• Part: MBR40080CT
  • Description: Silicon Power Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 487.15 KB
Download MBR40080CT Datasheet PDF
GeneSiC
MBR40080CT
Features - High Surge Capability - Types from 45 V to 100 V VRRM - Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 32 45 -55 to 150 -55 to 150 42 60 -55 to 150 -55 to 150 57 80 -55 to 150 -55 to 150 70 100 -55 to 150 -55 to 150 V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR40045CT(R) MBR40060CT(R) MBR40080CT(R) MBR400100CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.3 ms, half sine Maximum forward voltage (per...