Datasheet Summary
Silicon Power Schottky Diode
Features
- High Surge Capability
- Types from 20 V to 40 V VRRM
- Not ESD Sensitive
MBR60020CT thru MBR60040CTR
VRRM = 20 V
- 40 V IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
14 20 -55 to 150 -55 to 150
21 30 -55 to 150 -55 to 150
25 35 -55 to 150 -55 to 150
28 40 -55 to 150 -55 to 150
V V °C °C
Electrical characteristics, at Tj =...
