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MBR60040CTR Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Overview: Silicon Power Schottky Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(R) MBR60040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj.

MBR60040CTR from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
TRANSYS Logo MBR60040CTR SCHOTTKY DIODES TRANSYS
Naina Semiconductor Logo MBR60040CTR Schottky Power Diode Naina Semiconductor
America Semiconductor Logo MBR60040CTR Silicon Power Schottky Diode America Semiconductor
TRANSYS Logo MBR60040CT SCHOTTKY DIODES TRANSYS
Naina Semiconductor Logo MBR60040CT Schottky Power Diode Naina Semiconductor

More Datasheets from GeneSiC

Part Number Description
MBR60040CT Silicon Power Schottky Diode
MBR60045CT Silicon Power Schottky Diode
MBR60045CTR Silicon Power Schottky Diode
MBR600100CT Silicon Power Schottky Diode
MBR600100CTR Silicon Power Schottky Diode
MBR60020CT Silicon Power Schottky Diode
MBR60020CTR Silicon Power Schottky Diode
MBR60030CT Silicon Power Schottky Diode
MBR60030CTR Silicon Power Schottky Diode
MBR60035CT Silicon Power Schottky Diode

MBR60040CTR Distributor