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MBR60080CT Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Download the MBR60080CT datasheet PDF. This datasheet also includes the MBR60045CT variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR60045CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR60080CT
Manufacturer GeneSiC
File Size 461.66 KB
Description Silicon Power Schottky Diode
Download MBR60080CT Download (PDF)

Overview

Silicon Power Schottky Diode.

Key Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VD.