GeneSiC MBR60080CT
Silicon Power Schottky Diode
MBR60080CT Specifications
- Package : Module
- Mount Type : Chassis Mount
- Max Output Current : 300A
- Forward Current : 600A
- Terminals : 2
- Reverse Standoff Voltage : 80V
- Forward Voltage : 840mV
- Max Forward Surge : 4kA
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | MBR60080CT |
|---|---|
| Datasheet | MBR60080CT Download |
| Manufacturer |  GeneSiC |
| Description | Silicon Power Schottky Diode |
| Buy | Stock & Price |
FEATURES
● High Surge Capability● Types from 45 V to 100 V VRRM
● Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IF,SM Maximum forward voltage (per leg) VF Reverse current at rated DC blocking voltage (per leg) IR Thermal characteristics Thermal resi...
