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MBR80100R - Silicon Power Schottky Diode

Download the MBR80100R datasheet PDF. This datasheet also covers the MBR8045 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8045 thru MBR80100R VRRM = 45 V - 100 V IF(AV) = 80 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltag RMS reverse voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR8045-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR80100R
Manufacturer GeneSiC
File Size 342.27 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR80100R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MBR80100 Silicon Power Schottky Diode
MBR8020 Silicon Power Schottky Diode
MBR8020R Silicon Power Schottky Diode
MBR8030 Silicon Power Schottky Diode
MBR8030R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.