GeneSiC MBRF12080
Silicon Power Schottky Diode
FEATURES
● High Surge Capability● Types from 45 V to 100 V VRRM
● Not ESD Sensitive MBRF12045 thru MBRF120100R VRRM = 45 V - 100 V IF(AV) = 120 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF12045(R) MBRF12060(R) MBRF12080(R) MBRF120100(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 800 800 800 800 A Maximum forward voltage (per leg) VF IFM = 60 A, Tj = 25 °C 0.70 0.75 0.8...