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MBRF200100R - Silicon Power Schottky Diode

Download the MBRF200100R datasheet PDF. This datasheet also covers the MBRF20045 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types up to 100 V VRRM MBRF20045 thru MBRF200100R VRRM = 20 V - 100 V IF = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 45 60 80 100 V 32 42 56 70 V 45 60 80 100 V Continuous forward current IF TC ≤ 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRF20045-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRF200100R
Manufacturer GeneSiC
File Size 594.80 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRF200100R Datasheet

📁 Similar Datasheet

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MBRF200100R Silicon Power Schottky Diode America Semiconductor
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MBRF20020 Silicon Power Schottky Diode America Semiconductor
MBRF20020R Silicon Power Schottky Diode America Semiconductor
MBRF20030 Silicon Power Schottky Diode America Semiconductor

Other Datasheets by GeneSiC

Part Number Description
MBRF200100 Silicon Power Schottky Diode
MBRF200150 Silicon Power Schottky Diode
MBRF200150R Silicon Power Schottky Diode
MBRF200200 Silicon Power Schottky Diode
MBRF200200R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM MBRF20045 thru MBRF200100R VRRM = 20 V - 100 V IF = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 45 60 80 100 V 32 42 56 70 V 45 60 80 100 V Continuous forward current IF TC ≤ 140 °C 200 200 200 200 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.