MBRF50045 Datasheet | GeneSiC

Silicon Power Schottky Diode Features - High Surge Capability - Types from 45 V to 100 V VRRM - Not ESD Sensitive MBRF50045 thru MBRF500100R VRRM = 45 V - 100 V IF(AV) = 500 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 32 45 -55 to 150 -55 to 150 42 60 -55 to 150 -55 to 150 57 80 -55 to 150 -55 to 150 70 100 -55 to 150 -55 to 150 V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per...