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MBRH12030 Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Overview: MBRH12020 thru MBRH12040R Silicon Power Schottky Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • High Surge Capability.
  • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH120.

MBRH12030 Distributor