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MBRT20060R - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode

Download the MBRT20060R datasheet PDF. This datasheet also covers the MBRT20045 variant, as both devices belong to the same (mbrt20045 - mbrt200100r) silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types up to 100 V VRRM.
  • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRT20045_GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRT20060R
Manufacturer GeneSiC
File Size 499.31 KB
Description (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
Datasheet download datasheet MBRT20060R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MBRT20060R Silicon Power Schottky Diode America Semiconductor
MBRT20060 Silicon Power Schottky Diode America Semiconductor
MBRT200100 Silicon Power Schottky Diode America Semiconductor
MBRT200100R Silicon Power Schottky Diode America Semiconductor
MBRT20020 Silicon Power Schottky Diode America Semiconductor

Other Datasheets by GeneSiC

Part Number Description
MBRT20060 (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100 (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100R (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045 (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045R (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125 °C TC = 25 °C, tp = 8.