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MBRT40040L - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Type 40 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MBRT40040(R)L VRRM = 40 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT40040(R)L Unit Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Operating temperature Storage temperature V.

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Datasheet Details

Part number MBRT40040L
Manufacturer GeneSiC
File Size 598.33 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRT40040L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Low VF Silicon Power Schottky Diode Features • High Surge Capability • Type 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT40040(R)L VRRM = 40 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT40040(R)L Unit Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRT40040(R)L Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward volta