Datasheet Summary
MBRT40045 thru MBRT400100R
Silicon Power Schottky Diode
Features
- High Surge Capability
- Types up to 100 V VRRM
- Isolation Type Package Three Tower Package
VRRM = 20 V
- 100 V IF = 400 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT40045 (R) MBRT40060 (R) MBRT40080 (R) MBRT400100 (R) Unit 45 32 45 400 3000 -40 to 150 -40 to 175 60 42 60 400...
