GeneSiC MBRT60035R
Silicon Power Schottky Diode
| Part No. | MBRT60035R |
|---|---|
| Datasheet | MBRT60035R Download |
| Manufacturer |  GeneSiC |
| Description | Silicon Power Schottky Diode |
| Buy | Stock & Price |
FEATURES
● High Surge Capability● Types from 20 V to 40 V VRRM
● Isolation Type Package
● Electrically Isolated Base Plate
● Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage
