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Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 1200 V to 1600 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive
MSRTA300120(A)D thru MSRTA300160(A)D
VRRM = 1200 V - 1600 V IF(AV) = 300 A
Heavy Three Tower Package
MSRTA300XXXAD MSRTA300XXXADR MSRTA300XXXD
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA300120(A)D MSRTA300140(A)D MSRTA300160(A)D Unit
Repetitive peak reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM VDC Tj Tstg
1200 1200 -55 to 150 -55 to 150
1400 1400 -55 to 150 -55 to 150
1600
V
1600
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA300120D Datasheet
