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MUR20005CT - Silicon Super Fast Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 50 V to 200 V VRRM.
  • Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50.

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Datasheet Details

Part number MUR20005CT
Manufacturer GeneSiC
File Size 662.02 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR20005CT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Average forward