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MUR5020 - Silicon Super Fast Recovery Diode

Download the MUR5020 datasheet PDF. This datasheet also covers the MUR5005 variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 50 V to 200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MUR5005 thru MUR5020R VRRM = 50 V - 200 V IF = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR5005 (R) MUR5010 (R) MUR5020 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking vol.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR5005-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR5020
Manufacturer GeneSiC
File Size 675.24 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR5020 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MUR5020R Silicon Super Fast Recovery Diode
MUR5005 Silicon Super Fast Recovery Diode
MUR5005R Silicon Super Fast Recovery Diode
MUR5010 Silicon Super Fast Recovery Diode
MUR5010R Silicon Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MUR5005 thru MUR5020R VRRM = 50 V - 200 V IF = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR5005 (R) MUR5010 (R) MUR5020 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 50 35 50 50 100 200 70 140 100 200 50 50 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.