The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types up to 600 V VRRM
MURT30040 thru MURT30060R
VRRM = 50 V - 600 V IF = 300 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURT30040 (R)
MURT30060 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage
Continuous forward current
VRRM
VRMS VDC
IF
TC ≤ 125 °C
400
283 400
300
600
424 600
300
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.
MURT30040 Datasheet
