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Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive
MURTA20060 thru MURTA200120R
VRRM = 600 V - 1200 V IF(AV) = 200 A
Heavy Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA20060(R)
MURTA200120(R)
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
600
424 600 -55 to 150 -55 to 150
1200
--1200 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURTA20060(R)
MURTA200120(R)
Average forward current (per
MURTA20060 Datasheet
