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MURTA40060 - Silicon Super Fast Recovery Diode

Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MURTA40060 thru MURTA400120R VRRM = 600 V - 1200 V IF(AV) = 400 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

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Datasheet preview – MURTA40060

Datasheet Details

Part number MURTA40060
Manufacturer GeneSiC
File Size 415.01 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MURTA40060 Datasheet
Additional preview pages of the MURTA40060 datasheet.

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Full PDF Text Transcription

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA40060 thru MURTA400120R VRRM = 600 V - 1200 V IF(AV) = 400 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA40060(R) MURTA400120(R) Average forward current (per
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