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MURTA50020 - Silicon Super Fast Recovery Diode

Features

  • High Surge Capability.
  • Types from 200 V to 400 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MURTA50020 thru MURTA50040R VRRM = 200 V - 400 V IF(AV) = 500 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Oper.

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Datasheet Details

Part number MURTA50020
Manufacturer GeneSiC
File Size 685.56 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MURTA50020 Datasheet
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Full PDF Text Transcription

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 200 V to 400 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA50020 thru MURTA50040R VRRM = 200 V - 400 V IF(AV) = 500 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 200 141 200 -55 to 150 -55 to 150 400 283 400 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Average forward current (per pkg)
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