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Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 200 V to 400 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive
MURTA50020 thru MURTA50040R
VRRM = 200 V - 400 V IF(AV) = 500 A
Heavy Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA50020(R)
MURTA50040(R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
200 141 200 -55 to 150 -55 to 150
400 283 400 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURTA50020(R)
MURTA50040(R)
Average forward current (per pkg)
MURTA50040R Datasheet
