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Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types up to 600 V VRRM
MURTA60020 thru MURTA60060R
VRRM = 200 V - 600 V IF = 600 A
Heavy Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA60020 (R) MURTA60040 (R) MURTA60060 (R)
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage
VRRM
VRMS VDC
50 100 200
35 71 141 50 100 200
Continuous forward current
IF
TC ≤ 100 °C
600
600
600
Unit
V V V A
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.
MURTA60060R Datasheet
