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S320J - Silicon Standard Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS revers.

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Datasheet Details

Part number S320J
Manufacturer GeneSiC
File Size 730.57 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S320J Datasheet

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Other Datasheets by GeneSiC

Part Number Description
S320JR Silicon Standard Recovery Diode
S320K Silicon Standard Recovery Diode
S320KR Silicon Standard Recovery Diode
S320M Silicon Standard Recovery Diode
S320MR Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.