General Semiconductor BAT54S
Schottky Diodes
FEATURES
♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN 1 2 max. .004 (0.1) junction guard ring against excessive voltage, such as electrostatic discharges. .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4)MECHANICAL DATA
Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAT54 Marking: L4 3 BAT54A Marking: L42 3 Top View 1 2 1 2 BAT54C Marking: L43 BAT54S Marking: L44MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 30 2001) 3001) 6001) 150 –65 to +150 Unit V mA mA mA °C °C VRRM IF IFRM IFSM Tj TS Device on fiberglass substrate, see layout.