BZV55-F27
BZV55-F27 is ZENER DIODES manufactured by General Semiconductor.
FEATURES
- Silicon Planar Power Zener Diodes
∅ .063 (1.6) .055 (1.4)
Cathode Mark
- For use as low voltage stabilizer or voltage reference.
- The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request.
- Diodes available in these tolerance series: ±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C. MECHANICAL DATA
Case: Mini-MELF Glass Case (SOD-80) Weight: approx. 0.05 g Cathode band color: Blue
.142 (3.6) .134 (3.4)
.019 (0.48) .011 (0.28)
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current see Table “Characteristics” Power Dissipation at Tflange = 50°C Power Dissipation at TA = 50°C Junction Temperature Storage Temperature Range Continuous Forward Current Peak reverse power disipation (non-repetitive) tp=100µs Ptot Ptot Tj TS IF PZSM 500 400
(1) m W m W °C °C m A W
- 65 to +200
- 65 to +200 250 30
(2)
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Lead Forward Voltage at IF = 10 m A
Rth JA Rth JL VF
0.38 0.9
(1)
K/m W K/m W V
NOTES: 1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm 2) Tj = 150°C
9/29/98
BZV55 SERIES
ELECTRICAL CHARACTERISTICS
(1) Valid provided that electrodes are kept at ambient temperature.
Type y=B for ±2%Vz y=F for ±3%Vz y=C for ±5%Vz
Dynamic Resistance at IZ = 5 m A f =1 k Hz r zj (Ω) max. at IZ = 1 m A f =1 k Hz r zj (Ω) max. min.
Temp. coefficient of Zener Voltage at IZ = 5 m A α VZ (%/K)...
