GF2304 Datasheet N-Channel Enhancement-Mode MOSFET

Manufacturer: General Semiconductor (now Vishay)

GF2304 n-channel enhancement-mode mosfet by General Semiconductor (now Vishay) - Datasheet Preview

Datasheet Details

Part number	GF2304
Manufacturer	General Semiconductor (now Vishay)
File Size	96.34 KB
Description	N-Channel Enhancement-Mode MOSFET
Download	GF2304 Download (PDF)

Overview

GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1.

Gate 2.

Source 3.

Key Features

Advanced trench process technology.
High density cell design for ultra-low on-resistance.
Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities.
Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA.

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