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GF2304 - N-Channel Enhancement-Mode MOSFET

Features

  • Advanced trench process technology.
  • High density cell design for ultra-low on-resistance.
  • Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities.
  • Compact and low profile Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA.

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Other Datasheets by General Semiconductor (now Vishay)

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Full PDF Text Transcription

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GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) 3 12 .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) .055 (1.40) .047 (1.20) Top View TGREENNCFHET® 0.031 (0.8) 0.035 (0.9) Pin Configuration 1. Gate 2. Source 3. Drain Dimensions in inches and (millimeters) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Mounting Pad Layout max. .004 (0.1) .007 (.180) .003 (.085) .047 (1.20) .035 (0.90) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) .098 (2.5) .091 (2.3) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.
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