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GF2304 Datasheet PDF

General Semiconductor GF2304

N-Channel Enhancement-Mode MOSFET

Part No. GF2304
Datasheet GF2304 Download
Manufacturer
General Semiconductor
Description N-Channel Enhancement-Mode MOSFET
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GF2304 datasheet page 1 preview

MECHANICAL DATA

Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 04

FEATURES

● Advanced trench process technology
● High density cell design for ultra-low on-resistance
● Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities
● Compact and low profile

MAXIMUM RATINGS

and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current(1) Maximum Power Dissipation(2) TA = 25°C TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance(2) VDS VGS ID IDM PD TJ, Tstg RθJA 30 ± 20 2.5 10 1.25 0.80 –55 to +150 100 Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu) Unit V V A A W °C °C/W 5/3/01 GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A

ELECTRICAL CHARACTERISTICS

(TJ = 25°C...
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