GFB75N03 - N-Channel Enhancement-Mode MOSFET

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General Semiconductor

Part number	GFB75N03
Manufacturer	General Semiconductor
File Size	134.72 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GFB75N03 Datasheet
Additional preview pages of the GFB75N03 datasheet.

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30.

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Published: Oct 10, 2007 |