GFU30N03 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters and motor drives.
Fast Switching for High Efficiency 0.245 (6.22) 0.235 (5.97) G S Mechanical Data 0.375 (9.53) 0.350 (8.89) Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz. ,.

General Semiconductor

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Part number	GFU30N03
Manufacturer	General Semiconductor
File Size	99.04 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	GFU30N03 Datasheet
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GFU30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 (IPAK) E 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) D TM G G www.DataSheet4U.com 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) S D Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters and motor drives • Fast Switching for High Efficiency 0.245 (6.22) 0.235 (5.97) G S Mechanical Data 0.375 (9.53) 0.350 (8.89) Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g 0.

Published: Aug 22, 2008 |