General Semiconductor LL41
Schottky Diodes
FEATURES
♦ For general purpose applications. ♦ This diode features low turn-on ∅ .063 (1.6) .055 (1.4) Cathode Mark voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with type designation BAT41. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) ♦ This diode is also available in the DO-35 Dimensions in inches and (millimeters)MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 gMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C Surge Forward Current at tp = 10 ms, Tamb = 25 °C Power Dissipation, Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 –65 to +125 –65 to +150 Unit V mA mA mA mW °C °C °C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that electrodes are kept at ambient temperature.