LL41 Datasheet | General Semiconductor

FEATURES - For general purpose applications. - This diode features low turn-on ∅ .063 (1.6) .055 (1.4) Cathode Mark voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with type designation BAT41. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) - This diode is also available in the DO-35 Dimensions in inches and (millimeters) MECHANICAL DATA Case: Mini MELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C Surge Forward Current at tp = 10 ms, Tamb = 25 °C Power Dissipation, Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 - 65 to +125 - 65 to +150 Unit V m A m A m A m W °C °C °C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that electrodes are kept at ambient temperature. 4/98 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Test Conditions Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses Forward Voltage Pulse Test tp = 300 µs at IF = 1 m A at IF = 200 m A Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj = 25 °C at VR = 50 V, at Tj = 100 °C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 m A, to IR = 10 m A to IR = 1 m A RL = 100 Ohm Thermal Resistance Junction to Ambient Air 1) Symbol V(BR)R Min. 100 Typ. 110 Max. - Unit V VF VF - - - 0.45 1.0 IR IR Ctot trr - - - - - - 2...