MBR735 Datasheet | General Semiconductor

FEATURES 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.560 (14.22) 0.530 (13.46) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 0.560 (14.22) 0.530 (13.46) 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) MECHANICAL DATA 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) PIN 1 0.205 (5.20) 0.195 (4.95) PIN 2 CASE Dimensions in inches and (millimeters) Case: JEDEC TO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 5 in. - lbs. max. Weight: 0.08 ounces, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS MBR745 MBR750 MBR760 UNITS Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (SEE FIG 1) Peak repetitive forward current (square wave, 20 KHZ) at TC=105°C Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current (NOTE 1) Maximum instantaneous forward voltage at (NOTE 2) VRRM VRWM VDC I(AV) IFRM IFSM IRRM 35 35 35 45 45 45 7.5 15.0 150.0 1.0 0.57 0.84 0.72 0.1 15.0 10,000 3.0 60.0 50 50 50 60 60 60 Volts Volts Volts Amps Amps Amps 0.5 0.75 0.65 0.5 50 Amps IF=7.5A, TC=25°C IF=7.5A, TC=125°C IF=15A, TC=25°C IF=15A, TC=125°C Volts Maximum instantaneous reverse current at rated DC blocking voltage TC=25°C TC=125°C (NOTE 1) Voltage rate of change (rated VR) Maximum thermal resistance, (NOTE 3) Operating junction temperature range Storage temperature range IR dv/dt RΘJC RΘJA TJ TSTG m A V/µs °C/W °C °C -65 to +150 -65 to +175 NOTES: (1) 2.0µs, pulse width, f=1.0 KHZ (2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case and/or thermal resistance from...