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GD25LE64H Datasheet PDF

GigaDevice GD25LE64H

The GD25LE64H (64M-bit) Serial NOR Flash supports the standard Serial Peripheral Interface (SPI), the Dual and DTR Dual SPI, and the Quad and DTR Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#/ RESET#). The Dual I/O data is transferred with speed of 332Mbit/s, The Quad I/O data is transferred with speed of 664Mbit/s. The DTR Dual I/O data is transferred with speed of 416Mbits/s, and the DTR Quad I/O data is transferred with speed of 832Mbits/s.
Part No. GD25LE64H
Datasheet GD25LE64H Download
Manufacturer
GigaDevice
Description Dual and Quad Serial Flash
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GD25LE64H datasheet page 1 preview

FEATURES

● 64M-bit Serial NOR Flash Memory - 8M-Byte - 256 Bytes per programmable page
● Standard, Dual, Quad SPI, QPI, DTR - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#, RESET# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#, RESET# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET# - QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET# - SPI DTR (Double Transfer Rate) Read
● High Speed Clock Frequency - 166MHz for fast read - Dual I/O Data transfer up to 332Mbits/s - Quad I/O Data transfer up to 664Mbits/s - QPI Mode Data transfer up to 664Mbits/s - DTR Dual I/O Data transfer up to 416Mbits/s - DTR Quad I/O Data transfer up to 832Mbits/s
● Fast Program/Erase Speed - Page Program time: 0.18ms typical - Sector Erase time: 40ms typical - Block Erase time: 0.1s/0.16s typical - Chip Erase time: 10s typical
● Flexible Architecture - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte
● Low Power Consumption - 10μA typical standby current - 0.2μA typical deep power down current
● Advanced Security Fe...
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