GD5F4GQ4UAYIG Overview
Key Features
- 4G-bit Serial NAND Flash -512M-byte -2048 bytes page for read and program, spare 64bytes -(128K + 4K)bytes per block for erase
- Program/Erase/Read Speed -Page Program time: 400us typical -Block Erase time: 3ms typical -Page read time: 120us maximum(w/I ECC)
- Low Power Consumption -40mA maximum active current -70uA maximum standby current
- High Speed Clock Frequency -108MHz for fast read with 30PF load -Quad I/O Data transfer up to 432Mbits/s -2112/2048/64/16 wrap read option
- Enhanced access performance -2kbyte cache for fast random read -Cache read and cache program
- Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top or B
