GigaDevice GD9FS1G8F2DMGI
GD9Fx1G8F2D is 1Gbit capacity. The I/O pins serve as the ports for address and data input/output as well as command input.| Part No. | GD9FS1G8F2DMGI |
|---|---|
| Datasheet | GD9FS1G8F2DMGI Download |
| Manufacturer |  GigaDevice |
| Description | 1Gbit capacity |
| Buy | Stock & Price |
FEATURES
● Single level cell technology● ONFI 1.0 Compatible
● Power Supply Voltage - VCC/VCCQ = 1.7 ~ 1.95v(GD9FS) - VCC/VCCQ = 2.7 ~ 3.6v (GD9FU)
● Memory Cell Organization - Page size: X8: 2K + 128bytes - Block size: 64 pages X8: 128K + 8K bytes - Plane size: 1024 blocks - Device size: 1024blocks
● Page Read / Program time - Random Read Time (tR): 25us Max. - Sequential Access Time 3.3v Device: 12ns Min. 1.8v Device: 20ns Min. - Page Program (tPROG): 300us Typ.
● Block Erase - Block Erase Time (tBERS): 3ms Typ. GD9Fx1G8F2D
● Operating Current - Read(Typ): 15mA - Program(Typ): 15mA - Erase(Typ): 15mA - Standby(Max):50uA (CMOS)
● Reliability - P/E cycles with ECC: 50K - Data retention: 10 Years
● ECC Requirement - 8bit/512 bytes
● Operating Temperature - Industrial: -40C ~ 85C
● Chip Enable Don’t Care Option
● Security - UID - OTP Area
● Package - TSOP48 12mm x 20mm - FBGA63 9mm x 11mm - FBGA48 6mm x 8mm 4 GD9Fx1G8F2D 2.
GENERAL DESCRIPTION
GigaDevice GD9Fx1G8F2D is 1Gbit capacity. A program operation can be performed in typical tPROG on each page and an erase operation can be performed in typical tBERS on each block.
