GigaDevice GD9FS1G8F3AMG
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.FEATURES
● Single level cell technology● ONFI 1.0 Compatible
● Power Supply Voltage - VCC= 1.7 ~ 1.95v (GD9FS) - VCC = 2.7 ~ 3.6v (GD9FU)
● Memory Cell Organization - Page size: X8: 2K + 64bytes X16: 1K + 32words - Block size: X8: 128K + 4K bytes X16: 64K + 2K words - Plane size: 1024 blocks - Device size: 1024 blocks
● Page Read / Program time - Random Read Time (tR): 25us Max. - Sequential Access Time 3.3v Device: 25ns Min. 1.8v Device:45ns Min. - Page Program(tPROG): 300us Typ.
● Block Erase - Block Erase Time(tBERS): 3ms Typ.
● Number of Valid Blocks - Min 1004 blocks - Max 1024 blocks GD9Fx1GxF3A
● Operating Current - Read(25ns cycle): 15mA - Program(Typ): 15mA - Erase(Typ): 15mA - Standby(Max):50uA (CMOS)
● Reliability - P/E cycles with ECC: 100K - Data retention: 10 Years
● ECC Requirement - 4bit/512 bytes
● Operating Temperature - Industrial: -40C ~ 85C - Industrial: -40C ~ 105C
● Chip Enable Don’t Care Option
● Security - OTP area - Non-volatile protection
● Package - TSOPI 48 (12mm x 20mm) - FBGA63 (9mm x 11mm) - FBGA48 (6mm x 8mm) DS-GD9Fx1GxF3A-Rev1.8 4 February 2023 GD9Fx1GxF3A 2.