MKIRF2N65 - POWER MOSFET

Features

The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical.

Global Semiconductor

Datasheet Details

Part number	MKIRF2N65
Manufacturer	Global Semiconductor
File Size	2.15 MB
Description	POWER MOSFET
Datasheet	MKIRF2N65 Datasheet

📁 Similar Datasheet

MKI100-12E8 - IGBT Modules (IXYS)
MKI100-12F8 - IGBT Module (IXYS)
MKI41T56 - 512 bit 64b x8 Serial Access TIMEKEEPER SRAM (ST Microelectronics)
MKI50-06A7 - IGBT Modules H-Bridge (IXYS Corporation)
MKI50-12E7 - Short Circuit SOA Capability Square RBSOA (IXYS Corporation)
MKI50-12F7 - IGBT Module (IXYS)
MKI75-06A7 - IGBT Module (IXYS)
MKI75-06A7T - IGBT Module (IXYS)
MKI75-12E8 - IGBT Module (IXYS)

Other Datasheets by Global Semiconductor

MKIRF4N65 - POWER MOSFET

Full PDF Text Transcription

Click to expand full text

MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65 ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω Major Ratings and Characteristics Characteristics Values Units ID 2.0 A IDM 8.0 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.

Published: Apr 14, 2019 |