GSM1024 Description
GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM1024X7F (SOT-563).
GSM1024 Key Features
- 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V
- 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V
- 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-563 package design