GSM3131JZF Overview
These P-Channel enhancement mode power field effectAtransistorsAareAusingAtrenchADMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provideAsuperiorAswitchingAperformance,Aand withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
GSM3131JZF Key Features
- 30V, -5A, RDS(ON)=32mΩ@VGS=10V
- Fast switching
- Suit for -4.5V Gate Drive