Globaltech GSM3385ZF
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSM3385ZF |
|---|---|
| Datasheet | GSM3385ZF Download |
| Manufacturer |  Globaltech |
| Description | 30V P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -30V, -40A, RDS(ON)<8.5mΩ@VGS=-10V● Fast switching
● Suit for -4.5V Gate Drive
APPLICATIONS
● Green Device Available● DFN3X3-8L package design
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● Load Switch● LED Application Packages & Pin Assignments GSM3385ZF (DFN3X3-8L) GSM3385ZF Top View Pin
DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information Part Number GSM3385ZF Marking Information Package DFN3X3-8L Quantity Reel 5000 PCSABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current1 PD Power Dissipation TC=25℃ TC=100℃ TC=25℃ TC=100℃ TJ Operating Junction Temperature Range TSTG Storage Temperature Range RθJC Thermal Resistance-Junction to Case Typical -30 ±25 -40 -25 -128 21 8.3 -55 to +150 -55 to +...
