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GSM3385ZF - 30V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V, -40A, RDS(ON).

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Datasheet Details

Part number GSM3385ZF
Manufacturer Globaltech
File Size 743.06 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet GSM3385ZF Datasheet

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Full PDF Text Transcription

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GSM3385ZF 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ -30V, -40A, RDS(ON)<8.5mΩ@VGS=-10V ◼ Fast switching ◼ Suit for -4.
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