GSM3385ZF Datasheet Text
GSM3385ZF
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- -30V, -40A, RDS(ON)<8.5mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- Green Device Available
- DFN3X3-8L package design
Applications
- MB / VGA / Vcore
- POL Applications
- Load Switch
- LED Application
Packages & Pin Assignments
GSM3385ZF (DFN3X3-8L)
GSM3385ZF
Top View
Pin
Description
1
Source
2
Source
3
Source
4
Gate...